Semiconductor Device Fabrication Group at CSIR-CEERI, Pilani is established to develop the fabrication process technologies of different devices in the field of Optoelectronics, MEMS, Semiconudctor based devices etc. Group is involved in fabrication of following materials; Si, Ge, GaN, GaAs, InP, ZnO, SiO2, Si3N4, SOI etc., based devices. Group has 10 experienced scientists in the field of semiconductor device fabrication. Scientists working in the field are continuously updating the knowledge on semiconductor devices and fabricating new devices with modern techniques. Device fabrication facility is more than 30 year old. Currently, the group is working on III-Nitrides-based LEDs (visible, UV-B, UV-C) for various applications like decorative lighting, home lighting, disinfection etc. Other than III-Nitrides devices, the group have successfully fabricated other semiconductor devices such as laser diodes, MEMS based sensors (pressure, temperature, gas etc), flexible sensors, FBAR, MEMS magnetic sensors, Ku-band pass filter, nano-biosensors etc.

Group Vision : Our vision is to be the largest technology services provider to Indian industry in field of electronics and oproelctronics to step toward the “Atma Nirbhar Bharat”.

Group Mission: Group mission is to develop state-of-art technologies and to provide technologies and support to Indian industries and startups in the field of semiconductor and optoelectronics for import substitution.

Group Achievements: In recent years, the group has developed and demonstrated the various components/devices like InGaAs/GaAs 980-nm pump laser diode, 1×8 optical splitter, GaAs-based Hall sensors, corrugated long-period waveguide gratings (LPWGs) for integrated-optic band-reject/ band-pass filter and sensing applications (reported for the first time on silica-on-silicon material), alternate current (AC) operated blue LED chip, monolithic white LEDs, MEMS-based pressure, gas and temperature sensors, Ku-band pass filter, Film Bulk Acoustic Wave Resonators (FBAR), MEMS magnetic sensor, fused silica and silicon based microlens array, photonic crystal based structures/ devices on silicon-on-insulator etc.

Current ongoing projects

  • Design, Development & Fabrication of MEMS technology based Pressure and
    Temperature Sensors for Indian Navy and pilot implementation of Wireless Communication scheme with the sensors.
  • Design and development of flexible tactile sensors matrix for fetal health monitoring.
  • Design and Development of Tunable Film Bulk Acoustic Wave Resonators (FBAR) and Filters.
  • Ultraviolet Light Emitting Diodes emitting at 260 nm–285 nm range, grown on sapphire substrates, with FWHM in the range 10-15 nm, single device power levels up to 5 mW (5% EQE) under DC bias conditions.
  • Growth of GaN based blue-green laser structure using MOCVD.
  • Fabrication of Linear Variable Optical Filter (LVOF) in the 450-900 nm wavelength region.

Currently, semiconductor device fabrication group (SDFG) is involve in GaN, MEMS, Si, flexible electronics based devices like laser diodes, ultraviolet LEDs, pressure and temperature sensors, tunable FBAR, tactile sensor for strategic and societal applications. In short term, one of the main focus of the group is to convert the prototype technologies to industry standard by improving fabrication technology of the device. In medium to long term, the group will focus to develop the industry standard semiconductor device technologies such as GaN based devices (LEDs, laser diodes, power devices), MEMS based devices (IR emitters, pressure, temperature, gas sensors), optical coating and filters (highly reflecting, anti-reflection, band-pass filters for visible to infrared regions), detectors (IR) etc. The development of these components will help in the developing of indegenious technology based system/subsytem and which will reduce the import bill and country will step toward to self reliance. In long term, group will also focus to explore the futuristic technologies such as nano-techology based devices to fill up the future demand.