Following structured activities highlights the research directions of Semiconductor Devices Design group and focus areas in near future:

  • Development of E-mode III-Nitride devices for energy optimized agile power electronics
  • Design and development of high voltage (200-650 V) Gallium Nitride HEMTs
  • Design and development of Gallium oxide FET for Vbr≥2000V
  • Gallium Nitride based biosensors for early stage disease detection
  • Development of Silicon Carbide high power device technology
  • Development of GaN Quantum Wires Based Chemical Platform
  • Design and Development of ISFET based pH
  • Development of high isolation RF MEMS SPDT switches for space and ICT applications
  • RF MEMS based transceivers module including switches and phase shifters for 5G/6G applications
  • Design of IR/ THz and RF components for communication (5G and beyond)
  • Design of MEMS pressure sensors for Chetak helicopters of Indian Navy
  • Graphene based Flexible strain sensors
  • Development of reliable piezoelectric MEMS acoustic sensor for high sound pressure level (SPL) measurement and MEMS piezoelectric microphone
  • Design and development of the capacitive accelerometer module
  • Design and development of the ultrasonic transducer module for haptic application

Completed Projects

  • Design and development of GaN HEMTs based array platform for the detection of Cancer marker (CSIR-Mission)
  • Development of GaN HEMTs technology on Si (CSIR-CEERI-SCL, Mohali Joint R & D MoU)
  • AlGaN/GaN HEMTs based polar liquid sensor (BMBF-CSIR)
  • High frequency RF MEMS Capacitive switches (ISRO-SAC)
  • Design and fabrication of large deflection MEMS bimorph element for tunable filters (ISRO-SAC)
  • Design and development of L-band film bulk acoustic wave resonators (FBAR) and filters (SERB-DST)
  • Microcantilever-based piezoresistive sensor for biological agents (DRDO-DRDE)
  • Design, materials development and fabrication of capacitive micromachined ultrasonic transducer (CMUT) (CSIR-CNR)
  • Development of new generation nano metal-oxide/graphene-polymer composite materials for use in wearable electronics (CSIR)
  • Silicon FET platform for chemical/ biochemical Sensing (CSIR-Mission)
  • Design and development of photonic crystal (PhC)-based Integrated-optic sensor (CSIR-Mission)
  • Design and fabrication of MEMS antenna and phase shifters (CSIR)
  • Nano antennae for energy harvesting and THz generation and detection (CSIR)
  • RF fluidics for future high frequency integrated circuits (CSIR)

Ongoing/approved Projects

  • Development of E-mode III-Nitride devices for energy optimized agile power electronics (DST-CZECH)
  • Development of Silicon Carbide high power device technology (DRDO)
  • Design and development of MEMS-based piezoelectric acoustic sensor for low frequency application (DST-SERB)
  • Design and development of MEMS accelerometer (IISU-ISRO)