ES3-Reactive Ion Etching (RIE-Nitride)

Manufacturer: Sentech, Germany
MFD: 2004-10-01
Model: N/A
Specs: System is capable to etch the thin layer of GaN and GaAs based compound material. Cl2 and BCl3 based chemistry in available. Maximum substrate size: 2”
Charges: For Industry - 3500 /- INR Per Sample
For Student - 1750 /- INR Per Sample
*These are standard charges. Actual charges may vary as per job requirement.
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