Manufacturer: Thomas Swan, UK(Aixtron)
MFD: 2007-03-01
Model: N/A
Specs: MOCVD system is capable to growth the GaN,AlGaN,InGaN material on Sapphire for LED fabrication Wafer Capacity: 3 x 2" Reactor: Vertical reactor with close coupled showerhead Substrate heating: Tungsten heater (500-1200 oC) Wafer rotation: 100 rpm Wafer loading: Glovebox and loadlock operation.
Charges: For Industry - 72000 /- INR Per Sample
For Student - 36000 /- INR Per Sample
*These are standard charges. Actual charges may vary as per job requirement.
Contacts:

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