Manufacturer: Thomas Swan, UK(Aixtron)MFD: 2007-03-01Model: N/ASpecs: MOCVD system is capable to growth the GaN,AlGaN,InGaN material on Sapphire for LED fabrication
Wafer Capacity: 3 x 2"
Reactor: Vertical reactor with close coupled showerhead
Substrate heating: Tungsten heater (500-1200 oC)
Wafer rotation: 100 rpm Wafer
loading: Glovebox and loadlock operation.
Charges: For Industry - 72000 /- INR Per Sample
For Student - 36000 /- INR Per Sample
*These are standard charges. Actual charges may vary as per job requirement.Contacts: