
ES2-Deep Reactive Ion Etching (DRIE)
Manufacturer: AlcatelMFD: 2007-01-01Model: N/ASpecs: To create high-aspect ratio structure in silicon. Maximum wafer size: 6”, System equipped with ICP and RF source.Substrate temperature can be vary from -10 to 500CCharges: For Industry - 9000 /- INR Per Sample
For Student - 4500 /- INR Per Sample
*These are standard charges. Actual charges may vary as per job requirement.Contacts: