Packaging of other MEMS Devices and Sensors

Die bonding and wire bonding of circuit for MEMS devices was completed (Fig. 1) and handed over to a user group within the institute.


Fig. 1: Die bonding and wire bonding of circuit for MEMS devices

Die bonding and wire bonding of SiC Schottky barrier diode, SiC high purity semi-insulating bulk detectors and GaN (High-electron-mobility transistor over TO header were completed. Twelve packaged devices after bonding were handed over to a user group within the institute (Fig. 2).


Fig. 2: Die bonding and wire bonding of SiC schottky barrier diode, SiC high purity semi insulating bulk detector and GaN High-electron-mobility transistor

Wire bonding of sixteen MEMS gas sensor devices over TO header was completed. (Fig. 3) and were handed over to a user group within the institute.


Fig. 3: Wire bonding of MEMS gas sensors

Die bonding and wire bonding of CNTbased gas sensors over TO headers was completed. Five packaged gas sensors after bonding (Fig. 4) were handed over to a user group within the institute.


Fig. 4: Packaged CNT based gas sensors

Wire bounding of SPST and SPDT RF MEMS switches (2 switches) was completed (Fig. 5) and handed over to a user group within the institute.


Fig. 5. Wire bonding of SPST and SPDT RF MEMS switches

Wire bonding of four MEMS magnetometers was completed (Fig. 6) and handed over to a user group within the institute.


Fig. 6: Wire bonding of MEMS magnetometers