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| Optoelectronic Devices Group: Facilities |
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| Material Growth Facilities: |
| Equipment |
Capabilities |
Specifications |
Photographs |
Metal Organic Chemical Vapour Deposition (MOCVD) System
(CCS3x2", Thomas Swan, UK) |
GaAs / GaN Epitaxial Layers, Quantum Wells and Nano-structures |
Wafer Capacity: 3 x 2"
Reactor: Vertical reactor with close coupled showerhead
Substrate heating: Tungsten heater (500-1200 oC)
Wafer rotation: 100 rpm Wafer
loading: Glovebox and loadlock operation. |
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Reactive Ion Etching (RIE) System
(SI 590, Sentech, Germany) |
Dry etching of compound semiconductors (GaAs and GaN) |
Etch Chemistry:
Cl2
, BCl3, Ar
Reactor: Parallel plate reactor
Operating Frequency: 13.56 MHz
Maximum Power:
600 W
Substrate Size:
Up to 4"
End point detection: Laser Interferometer |
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Photoluminescence Mapping System
(RPM 2000, Accent Optics, USA) |
To measure band gap, composition, crystal quality and uniformity in a wafer |
Laser: 266 nm, 6 mW Q Switched
PL Range: 300 nm to 1050 nm
Gratings : 150, 300 and 600 g/mm
Detectors: Si CCD/InGaAs array
Reflectivity: White light source
Wafer Chucks: 2", 3", and 4". |
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| Material Deposition Facilities: |
| Equipment |
Capabilities |
Specifications |
Photographs |
Plasma Enhanced Chemical Vapor Deposition (PECVD) System (Multiplex PECVD Module, STS, U.K.) |
System configured for Planar Optical Waveguides |
Carousel Load lock : 4"/ 6" wafer
Upper Electrode : 250 oC
Lower Electrode :300 oC
LF RF Generators: 380KHz
HF RF Generators: 13.56 MHz
Chamber Etch Back: (C4F8 + O2)
Process Gases : Silane, Phosphine, Diborane, Germane |
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Prism Coupler
(Model 2010, Metricon, USA |
To measure refractive index, thickness and loss of planar optical waveguides |
Refractive Index Range: 1.3 to 1.8 (Accuracy: 0.0001)
Thickness Range: 0.8 to 20 mm
(Accuracy: ± 0.6% in 4 to 8 mm range)
Wavelengths: 632.8 and 1548 nm
Loss Measurement: Fiber moving method |
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| DWDM Test System IQS-510 |
To measure Optical Insertion Loss, Cross Talk, Return Loss, Adjacent Channel Loss, Polarization Dependent loss etc. of optical waveguides |
Laser Sources: 8 Nos.
Output Power: +10 dBm
Central Wavelength: 1550.52 nm
Range: 1548.12 to 1553.72 nm with 0.8nm increments
Detector Range: 1100 - 1700 nm
Variable Attenuator: Yes
Polarization Scrambler: Yes |
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| Device Fabrication Facilities: |
| Facility |
Model |
Photograph |
Photolithography
(Mask Aligner, Spinner, Microscope etc.) |
MJB3 UV 300/400 |
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Ultra High Vacuum E-Beam Evaporation System
(Ti, Al, Au, Pt, Cr, AuGe, NiCr etc.) |
Varian VT 114 |
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Magnetron Sputtering System
(Al2O3, Si etc.) |
Elettrorava |
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Reactive Ion Etching System
(Dielectrics) |
In-house (CEERI-NPL) |
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Oxygen Plasma Ashing System
(To remove traces of Photoresist) |
In-house |
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Surface Profiler
(Thickness Measurement) |
XP-2, Ambios |
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Automatic Dicing Saw
(Si, GaAs, InP, Alumina, glass, SiC) |
Automatic Dicing Saw DAD321, Disco |
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| Testing Facilities: |
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| Design Facilities: |
| Design |
Software |
| GaN HEMTs, Optoelectronic Devices (Device Structure and Device Modeling) |
TCAD-ATLAS, Silvaco |
| GaN LEDs and Optoelectronic Devices (Device Structure and Device Modeling) |
TCAD-MEDICI, Synopsis |
Planar Lightwave Circuits(Splitters, Multiplexers) |
WDM Phasar, Optiwave |
Waveguide and Fiber Gratings
(Long Period and Short Period)
| OptiGrating, Optiwave |
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