Current Activities

  Future Plans

  Achievements

  Facilities

  Publications

  Team Members

 
Optoelectronic Devices Group: Achievements
 
Devices Fabricated:
Devices Applications Specifications Photographs
C-Band GaAs High Power MESFET Devices Solid State Power Amplifiers for Satellite Communications

Output Power: 2 - 2.5 W
Gain: 6 dB Frequency: 4 GHz
Total Gate Width: 5.04 mm
(Tested at SAC, Ahmedabad)

C-Band GaAs High Power MESFET Modules Solid State Power Amplifiers for Satellite Communications

Two-Chip Module:
Output Power: 4.6 W
Gain: 9.2 dB
Operating Frequency: 3.75GHz
(Tested at SAC, Ahmedabad

980 nm Pump Laser Diode Erbium Doped Fiber Amplifier in Optical Fiber Communications

Wavelength: 980 nm 10 nm
Threshold Current, Ith: 35 mA
Output Power: 160 mW

980 nm Pump Laser Diode Module with 14 PIN Butterfly Package Erbium Doped Fiber Amplifier in Optical Fiber Communications and CATV

Drive Current: 350 mA
Output Power: 95 mW
Gain @ 1550 nm in EDFA block: 14 dBm
(Measured at CGCRI)

 
Front and Back Illuminated InGaAs Photodetectors Broadband Optical Communications

Wavelength range:
1200-1600 nm
Breakdown Voltage: 50 V
Dark Current: 5 nA
Capacitance (1 MHz): 0.5 pF

Large Area InGaAs/InP Photodetectors Optical Power Meters

Breakdown voltage: > 20 V
Responsivity:
0.83 A/W at 1310 nm
0.99 A/W at 1550 nm
Dark Current:< 50 nA at -5 V
NEP: 70 nW
(Measured at Optiwave)

Photodetectors for WDM Tunable Filters DWDM Optical Networks

Operating wavelength: 1520-1560 nm
3-db Bandwidth: 1.2 GHz
WDM operation: 1 Gbps
(Measured at TUD, Darmstadt)

WDM Tunable Filter WDM Optical Networks

Operating wavelength: 1520-1560 nm
Free Spectral Range: 37 nm
FWHM: 0.25 nm
Thermal Actuation Current: 0-55 mA
Filter Losses: ~ 10 dB

Integrated Optical Receiver Module for 155 Mbps Telecommunications and High Speed Optical Communications

Operation wavelength: 1310 & 1550 nm
Sensitivity: - 29 dBm
Dynamic Range: 23 dB
BER: 10-9
(Measured at C-DoT, Delhi)

Hybrid PIN-FET/APD FET
Receiver Modules for 8-622 Mbps
SONET/ Fiber Optic Receivers and Optical Data Communication

Sensitivity: - 45 dBm (at 8 Mbps)
-25 dBm (at 622 Mbps)
Dynamic Range: 23 to 25 dB
BER: 10-9

Fiber Optic Analog CATV Receiver Up-stream fiber links in a community antenna television (CATV) system

Operation wavelength: 1300-1600 nm
Gain flatness: 1 - 2 dB
Output power: 34 dBm
AGC threshold : 25x10-3 mW

1 x 8 Optical Power Splitter Passive Optical Networks in Fiber to the Home (FTTH) and Optical Communications

Operating wavelength: 1550 nm
Underclad (SiO2): no=1.445,
Thickness =15x10-3 mm
Core (Ge-SiO2): nc =1.449
Thickness = 8 x10-3 mm
Upperclad (BPSG): no=1.445
Thickness =12x10-3 mm
Dn, Index Difference: 0.30 %
Port to Port Spacing: 250x10-3 mm
Avg. Insertion loss : ~ 15 dB
Uniformity: 2.5 dB

8 x 8 Arrayed Waveguide Grating Multiplexer / Demultiplexer DWDM Optical Networks

Operating wavelength: 1550 nm
Underclad (SiO2): no=1.445
Thickness = 15 mm
Core(Ge-SiO2): nc =1.455
Thickness = 6 mm
Upperclad (BPSG):
no= 1.445
Thickness = 12 mm
Dn, Index Difference: 0.75 %
Port to Port Spacing: 250x10-3 mm

 
Past Projects:
 
S.No. Project Year

1.

Development of Space Qualified QMMIC

1991-1994

2.

Development of hybrid PIN-FET preamplifier receiver module for 1.3 mm Optical Communications

1993-1995

3.

Need specific detectors and receivers for Optical Communications

1994-1998

4.

Development of C-Band GaAs High Power MESFETs (Phase I)

1994-1998

5.

Semiconductor Laser modules for Communication and Pumping Application

1995-1998

6.

GaAs FETs for Communications

1985-1994

7.

Development of Pump Laser emitting at 980 nm

1998-2001

8.

Silica-on-Silicon based Integrated Optic components for WDM Applications

1998-2001

9.

Design and Development of C-Band High Power GaAs MESFET modules (Phase II)

1998-2002

10.

III-V Compound Semiconductor based OEICs for Gbps Optical Communications

1999-2003

11.

Patterning of Optical Waveguides and Devices

2000-2003

12.

Process optimization of improvement in yield, performance, and reliability of 980 nm Laser Diodes and PDs developed indigenously

2002-2005

13.

Development of key Technologies for Photonics and Optoelectronics
(i). High power pump laser source for Optical amplifiers (Task-I)
(ii). Arrayed Planar Waveguide components for Communications and Sensor Applications (Task-III)

2002-2007

14.

Optical MEMS based High Speed long wavelength OEIC for DWDM applications

2004-2007

 
 

   
 
Copyright © CEERI Pilani.