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Sensors and Nanotechonologies Group: Facilities
Services and Facilities Provided
Facilities Specification Photograph
ZnO Thin Film Deposition Facility Highly c-axis orientated ZnO (0001) thin film deposition
Film thickness upto ~5μm
Film deposition rate 0.4μm/hour
Wafer size 2”,3” and 4”
Substrate rotation 1-20 RPM
RF power 600W
Pulsed DC power (5-100 kHz) 5kW
Magnetron source size 6” diameter
Substrate temperature 30-600˚C
Best Vacuum >2×10-7 Torr
Horizontal sputtering
Reactive Magnetron Sputtering (TFSP-840), VST Israel

Sputtering source            700W DC
                                    800W RF
Operating pressure         1 to 50 mTorr
Target Diameter             3”
Substrate Temp.             25˚C to 250 ˚C
Best vacuum                  2x10-7 Torr

Sample transfer to main chamber by load lock facility
Double Side Mask Aligner (MA6) with Nano imprint lithography (UV-NIL), SUSS MiroTec Germany

Wafer size                    2” to 6” Diameter
Mask size                     up to 7”x7”
Resolution                    0.5μm
Alignment Accuracy        0.5μm

UV-NIL attachment for Nano scale features
Vibrating Sample Magnetometer (EV9) with Magnetoresistance (MR), MicroSense USA

Maximum field                2.6T
Sensitivity                       0.1μemu
Sample rotation               ±400˚

Magnetoresistance          <1mOhm to >1MOhm
Scanning Electron Microscope
Jeol JSM - 6390 LV with EDS (INCA)
E-source : W and LaB6
Resolution : 2.5nm with LaB6
Magnification: 5x - 300,000x
Acc. Voltage: 200V - 30kV
Elemental Analyses: Boron - Uranium
Detectors: SE, BSE, CLD, SiLi (LN2 Free)
Kelvin Probe Based Gas Sensors Characterization System

Kelvin probe based gas sensors characterization setup measures the change in work function of thick/thin films upon gas ambient modifications. Kelvin probe control along with mass flow controller, valves, power supplies and other hardware is made in-house at CEERI. The hardware is interfaced with PC and the complete system is controlled by LabVIEW program. System is capable to perform experiments at different humidity and temperatures.

Technical Specifications:
Sample Size: < 8 mm X 8 mm
Sample Thickness: < 1 mm
Maximum Flow: 300 ml/min
Measured Output Data Format: Excel/Origin

Suss PM8 Prober (with Probshield) and Keithley 4200 SCS with switch matrix and CV meter 590

Source/Measure Units (SMUs) with 210 V (max) and 1A (max.).
Current resolution = 100 attoA (measure) and 15 femtoA (source).
Measurable capacitance = 10 fF - 20 nF.
Frequencies:100 KHz & 1 MHz .
Measurement temperature range = -40°C to +200°C.

Mask making
Mask Making Unit converts Design Layouts into Individual Mask Layers for Photolithography
Oxidation & Diffusion
Oxidation and Diffusions are High Temperature Processes to Grow Silicon Dioxide and for Doping Impurities into Silicon
Photolithography Defines and Shapes Miniaturized Electronic Devices
Reactive ion etching
Reactive Ion Etching removes Material from Unwanted Portions on Silicon Wafer
Ion Implantation
Ion Implantation is used for Impurity Ion Doping in Silicon
Plasma Enhanced Chemical Vapor Deposition
Plasma Enhanced Chemical Vapor Deposition Technique is Used to Deposit Insulating layers onto Silicon wafers
Metallization is Used to Interconnect Individual Devices Fabricated on Silicon Wafer
2 KW e-beam evaporation system for noble metals
Co-evaporation in UHV for noble metals for a thickness from few tens of Angstrom to few thousands of Angstrom. In-situ thickness monitor. Ni, Au, Ti, Cr, Pt are commonly deposited metals.
KOH etching set up with reflex condensor
KOH solution of 45% with temperature variation from 70 to 1300C with reflex condenser equipped with chilled water cooling arrangement to maintain the concentration of the solution near boiling point. Etching rate of Si (100) @ 1-1.2 X 10-6 m/min.
Talystep profiler Minimum thickness measurement - 20 A0,
Maximum thickness - 10 X 10-6m
Electroplating set up with gold anode
Gold and silver electroplating on selective areas using photoresist with varying current density and bath temperature for controlling the grain size and its density.
Ball to wedge wire bonder
1.0 mil gold wire with adjustable temperature, force and length of bonded wire in a sequence of ball to wedge order.
Test bench with compatible computer and LabVIEW software
Labview based graphical platform for data acquisition and analysis with computer controlled test set up through USB to GPIB interfacing for I-V and C-V of packaged devices and circuits.
Packaging and Electrical device testing
Fully Processed Silicon Wafer with all Device specifications & ready for Dicing and Packaging
Test and measurement set up for wafer level and packaged devices Test and measurement set up for wafer level and packaged devices
Fabrication of custom masks.
Deposition of dielectric thin films.
Material/ device characterization AFM, SEM.
Computer aided test and measurement for packaged devices.
Sputter deposition systems, Atomic force microscopy, Scanning electron microscopy, Packaging and Electrical device testing.
Design Tools: CoventorWare, EM3DS, Tanner Layout Editor, HFSS, and ANSYS.
Analytical Tools: Scanning Electron Microscope (resolution 2.5 nm) with LN2 free EDS.
  Dip-Pen-Nanowriting (DPN)

NSCRIPTOR System (M/s Nanoink, USA) has been procured and commissioned at CEERI, Pilani, under sponsored project in nanotechnology, from Department of Information Technology, Govt. of India. System is capable of direct writing and aligning nano-dimensional patterns of different molecular inks on compatible substrates. The written patterns can be imaged and viewed in the same system through AFM imaging. Writing of nano-lines of MHA ink on gold substrate with line-width ~ 30 nm has been demonstrated. System also has capability of nano-oxidation of different materials for generating insulating barriers at nano-scale. Currently, equipment in being used to develop enabling technologies for nano-structures and futuristic nano-electronic devices.
  Complete DPN NSCRIPTOR System Word "CEERI" written with MHA Ink on gold substrate (line width ~ 30 nm)

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