| Facilities |
Specification |
Photograph |
Scanning Electron Microscope
Jeol JSM - 6390 LV with EDS (INCA) |
E-source : W and LaB6
Resolution : 2.5nm with LaB6
Magnification: 5x - 300,000x
Acc. Voltage: 200V - 30kV
Elemental Analyses: Boron - Uranium
Detectors: SE, BSE, CLD, SiLi (LN2 Free) |
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| Kelvin Probe Based Gas Sensors Characterization System |
Kelvin probe based gas sensors characterization setup measures the change in work function of thick/thin films upon gas ambient modifications. Kelvin probe control along with mass flow controller, valves, power supplies and other hardware is made in-house at CEERI. The hardware is interfaced with PC and the complete system is controlled by LabVIEW program. System is capable to perform experiments at different humidity and temperatures.
Technical Specifications:
Sample Size: < 8 mm X 8 mm
Sample Thickness: < 1 mm
Maximum Flow: 300 ml/min
Measured Output Data Format: Excel/Origin
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Suss PM8 Prober (with Probshield) and Keithley 4200 SCS with switch matrix and CV meter 590 |
Source/Measure Units (SMUs) with 210 V (max) and 1A (max.).
Current resolution = 100 attoA (measure) and 15 femtoA (source).
Measurable capacitance = 10 fF - 20 nF.
Frequencies:100 KHz & 1 MHz .
Measurement temperature range = -40°C to +200°C. |
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| Mask making |
Mask Making Unit converts Design Layouts into Individual Mask Layers for Photolithography |
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| Oxidation & Diffusion |
Oxidation and Diffusions are High Temperature Processes to Grow Silicon Dioxide and for Doping Impurities into Silicon |
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| Photolithography |
Photolithography Defines and Shapes Miniaturized Electronic Devices
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| Reactive ion etching |
Reactive Ion Etching removes Material from Unwanted Portions on Silicon Wafer
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| Ion Implantation |
Ion Implantation is used for Impurity Ion Doping in Silicon |
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| Plasma Enhanced Chemical Vapor Deposition |
Plasma Enhanced Chemical Vapor Deposition Technique is Used to Deposit Insulating layers onto Silicon wafers
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| Metallization |
Metallization is Used to Interconnect Individual Devices Fabricated on Silicon Wafer
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| 2 KW e-beam evaporation system for noble metals |
Co-evaporation in UHV for noble metals for a thickness from few tens of Angstrom to few thousands of Angstrom. In-situ thickness monitor. Ni, Au, Ti, Cr, Pt are commonly deposited metals. |
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| KOH etching set up with reflex condensor |
KOH solution of 45% with temperature variation from 70 to 1300C with reflex condenser equipped with chilled water cooling arrangement to maintain the concentration of the solution near boiling point. Etching rate of Si (100) @ 1-1.2 X 10-6 m/min. |
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| Talystep profiler |
Minimum thickness measurement - 20 A0,
Maximum thickness - 10 X 10-6m |
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| Electroplating set up with gold anode |
Gold and silver electroplating on selective areas using photoresist with varying current density and bath temperature for controlling the grain size and its density. |
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| Ball to wedge wire bonder |
1.0 mil gold wire with adjustable temperature, force and length of bonded wire in a sequence of ball to wedge order. |
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| Test bench with compatible computer and LabVIEW software |
Labview based graphical platform for data acquisition and analysis with computer controlled test set up through USB to GPIB interfacing for I-V and C-V of packaged devices and circuits. |
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| Packaging and Electrical device testing |
Fully Processed Silicon Wafer with all Device specifications & ready for Dicing and Packaging |
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| Test and measurement set up for wafer level and packaged devices |
Test and measurement set up for wafer level and packaged devices |
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